Qualcomm announce Snapdragon 835, Slimmer Processor Consumes Less Power
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Qualcomm is known for providing processors and chips for smartphones. Today, Qualcomm has announced its next generation SoC Snapdragon 835, which will be built on Samsung’s latest cutting edge 10nm FinFET node, on which the South Korean Company has started working in October this year. Qualcomm’s currently running high end processors Snapdragon 820 and 821 are built on Samsung’s 14nm process.
Snapdragon 835 built on Samsung’s 10nm Process:
This exciting news was announced at a press event in New York, where the two companies jointly announced the Qualcomm’s Snapdragon 835. According to the details, the newly announced processor will bring both performance and energy efficiency improvements, comparing to this year’s Snapdragon 820 and 821.
This move to latest 10nm process based Snapdragon 835 will provide a 30 percent increase to area efficiency, combined with up to a 27 percent boost to performance or in other words an incredible 40 percent reduction in power consumption. This will surely support high performance in low power consumption for smartphones. Latest Snapdragon 835 SoC will also support Qualcomm’s latest announced Quick Charge 4.0 technology, which is another great improvement in battery charging field.
We are excited to continue working together with Samsung in developing products that lead the mobile industry. Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow's mobile devices.
Keith Kressin, senior vice president of product management at Qualcomm:
Qualcomm’s other competitors including Intel and TMSC, are still working on 10-nanometer chips. The Snapdragon 835 is now in production, and we will most likely see the Snapdragon 835 based smartphones in first half of 2017.
